8.23 Sspd_chapter 6_part 7_introduction to athena 4_process simulator

SSPD_Chapter 6_Part 7_Introduction to ATHENA4

SECTION 7.7 Background of ATHENAcontinued.

7.7.2. Creating Device Structure using ATHENA

7.7.2.7. Reflecting a Structure in the “Y” Plane using the Mirror Parameter

This tutorial process simulation has been building one half of a MOSFET- like structure. At some point in the simulation, you will need to obtain the full structure. This must be done before exporting the structure to a device simulator or setting electrode names. In general, structure reflection should be performed when the structure ceases to be symmetrical (e.g., a tilted implant, an asymmetrical etching, or a deposition takes place), or when a reflecting boundary condition no longer applies to the side, which is going to be the center of the structure.

This example will explain how to mirror the structure at its left boundary. To mirror the structure, select Structure → Mirror in the Commands menu (Figure 7.28).

Then, press the Write button to write the following statement to the input file:

STRUCT MIRROR LEFT

The resulting structure is shown in Figure 7.29.

The left half of the structure is a complete mirror copy of the right part, including node coordinates, doping values, and so on. Beware of rounding errors when mirroring. If the boundary of reflection is not smooth to within 0.1 angstroms, some points will be duplicated.