EC1661_IC Design and Fabrication Technology-Microelectronics [3-1-0]
Introduction – 50 years journey of IC Technology from micro to nano era_a broad overview.
Bipolar Junction Transistor Fabrication Process Flow ; substrate preparation, oxidation process (wet and dry), photo-lithography , diffusion (pre-deposition and drive-in), buried layer diffusion_drive-in, Chemical Vapour Phase Deposition of thin Si epitaxial layer , isolation diffusion, base diffusion, emitter and collector pre-deposition diffusion, metallization for contact pads and interconnections, scribing of individual dies, mounting on ceramic wafers, ceramic wafers are bonded to headers, hermetic shielding and packaging (TO5 or Dual-in-Line package).
Diode, Resistance and capacitor realization by IC Technology.
BJT IC layout consideration.
MOS instability and C-V measurement curves under steady state DC voltages, ideal High-Frequency Capacitance and Low Frequency Capacitance.
Theoretical formulation of Threshold Voltage in MOS.
Comparative studies of BJT and MOS Technology.
Complete CMOS Process Flow: Ion –Implantation , LOCOS , Shallow Trench Isolation , Field –implant under LOCOS, Buried and Epitaxial layer option, LPCVD of Poly-Si gate, self-aligned Source and Drain, side-wall spacers along the edge of gate, source/drain LDD, multi-level interconnection -back end processing.
Using ATLAS and ATHENA carrying out the following simulations;
PN Junction Diode Simulation.
NPN BJT Simulation.
CMOS simulation.
Text Book: . Uploaded on (External Link) SSPD_Chapter 6 by Bijay Kumar Sharma;
References : ”Silicon VLSI Technology: Fundamentals, Practice and Modeling”, Plummer, Deal and Griffin, Prentice Hall.