8.31 Sspd_chapter 6_part 10_simulation of mosfet

SSPD_Chapter 6_Part 10_MOSFET Simulation.

6.10.1. mos1ex01:Plot of I D -V GS at constant V DS and extraction of V Th .

go athena

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line x loc=0.0 spac=0.1

line x loc=0.2 spac=0.006

line x loc=0.4 spac=0.006

line x loc=0.6 spac=0.01

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line y loc=0.0 spac=0.002

line y loc=0.2 spac=0.005

line y loc=0.5 spac=0.05

line y loc=0.8 spac=0.15

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init orientation=100 c.phos=1e14 space.mul=2

#pwell formation including masking off of the nwell

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diffus time=30 temp=1000 dryo2 press=1.00 hcl=3

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etch oxide thick=0.02

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#P-well Implant

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implant boron dose=8e12 energy=100 pears

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diffus temp=950 time=100 weto2 hcl=3

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#N-well implant not shown -

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# welldrive starts here

diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3

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diffus time=220 temp=1200 nitro press=1

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diffus time=90 temp=1200 t.rate=-4.444 nitro press=1

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etch oxide all

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#sacrificial "cleaning" oxide

diffus time=20 temp=1000 dryo2 press=1 hcl=3

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etch oxide all

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#gate oxide grown here:-

diffus time=11 temp=925 dryo2 press=1.00 hcl=3

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# Extract a design parameter

extract name="gateox" thickness oxide mat.occno=1 x.val=0.05

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#vt adjust implant

implant boron dose=9.5e11 energy=10 pearson

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depo poly thick=0.2 divi=10

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#from now on the situation is 2-D

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etch poly left p1.x=0.35

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method fermi compress

diffuse time=3 temp=900 weto2 press=1.0

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implant phosphor dose=3.0e13 energy=20 pearson

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depo oxide thick=0.120 divisions=8

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etch oxide dry thick=0.120

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implant arsenic dose=5.0e15 energy=50 pearson

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method fermi compress

diffuse time=1 temp=900 nitro press=1.0

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# pattern s/d contact metal

etch oxide left p1.x=0.2

deposit alumin thick=0.03 divi=2

etch alumin right p1.x=0.18

# Extract design parameters

# extract final S/D Xj

extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1

# extract the N++ regions sheet resistance

extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1

# extract the sheet rho under the spacer, of the LDD region

extract name="ldd sheet rho" sheet.res material="Silicon" \

mat.occno=1 x.val=0.3 region.occno=1

# extract the surface conc under the channel.

extract name="chan surf conc" surf.conc impurity="Net Doping" \

material="Silicon" mat.occno=1 x.val=0.45

# extract a curve of conductance versus bias.

extract start material="Polysilicon" mat.occno=1 \

bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45

extract done name="sheet cond v bias" \

curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\

outfile="extract.dat"

# extract the long chan Vt

extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49

structure mirror right

electrode name=gate x=0.5 y=0.1

electrode name=source x=0.1

electrode name=drain x=1.1

electrode name=substrate backside

structure outfile=mos1ex01_0.str

# plot the structure

tonyplot mos1ex01_0.str -set mos1ex01_0.set

############# Vt Test : Returns Vt, Beta and Theta ################

go atlas

# set material models

models cvt srh print

contact name=gate n.poly

interface qf=3e10

method newton

solve init

# Bias the drain

solve vdrain=0.1