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SSPD_Chapter 6_Part 7_Introduction to ATHENA1(Process Simulator)
7.7. Background of ATHENA (Process Simulator)
The ATHENA Two-Dimensional Process Simulation Framework is a comprehensive software tool for modeling semiconductor fabrication processes. ATHENA provides facilities to perform efficient simulation analysis that substitutes for costly real world experimentation. ATHENA combines high temperature process modeling such as impurity diffusion and oxidation, topography simulation, and lithography simulation in a single, easy to use framework.
ATHENA is a simulator that provides general capabilities for numerical, physically-based, two- dimensional simulation of semiconductor processing. ATHENA has a modular architecture with the following licensable tools and extensions:
• ATHENA: This tool performs structure initialization and manipulation, and provides basic deposition and etch facilities
• SSUPREM4: This tool is used in the design, analysis, and optimization of silicon semiconductor structures. It simulates silicon processing steps such as ion implantation, diffusion and oxidation.
• ELITE: This tool is a general purpose 2D topography simulator that accurately describes a wide range of deposition, etch and reflow processes used in modern IC technologies.
• OPTOLITH: This tool performs general optical lithography simulation including 2D aerial imaging, non-planar photoresist exposure, and post exposure bake and development.
Table 7.4: Athena Features and Capabilities
| Features | Capabilities |
| Bake | • Time and temperature bake specification.• Models photoresist material flow.• Models photo-active compound diffusion. |
| C-Intepreter | • Allows user-defined models for implant damage, Monte Carlo plasma etching and diffusion in SiGeC. |
| CMP | • Models Chemical Mechanical Polishing.• Hard and soft models or a combination of both.• Includes isotropical etch component. |
| Deposition | • Conformal deposition model.• Hemispherical, planetary, and conical metallization models.• Unidirectional or dual directional deposition models.• CVD model.• Surface diffusion/migration effects.• Ballistic deposition models including atomistic positioning effects.• User-definable models.• Default deposition machine definitions. |
| Mask Development | • Five different photoresist development models. |
| Diffusion | • Impurity diffusion in general 2D structures including diffusion in all material layers.• Fully coupled point defect diffusion model.• Oxidation enhanced/retarded diffusion effects.• Rapid thermal annealing.• Models simultaneous material reflow and impurity diffusion.• Impurity diffusion in polysilicon accounting for grain and grain boundary components. |
| Epitaxy | • 2D epitaxy simulation including auto-doping. |
| Etch | • Extensive geometric etch capability.• Wet etching with isotropic profile advance.• RIE model that combines isotropic and directional etch components.• Microloading effects.• Angle dependence of etchant source.• Default etch machine definitions.• Monte Carlo plasma etching.• Dopant enhanced etching. |
| Exposure | • Model is based on the Beam Propagation Method simulating reflections and diffraction effects in non-planar structures with capability to take into account local modification of material optical properties the absorbed dose.• Defocus and large numerical aperture effects. |
| Imaging | • Two dimensional, large numerical aperture, aerial image formation.• Up to 9th order imaging system aberrations.• Extensive source and pupil plane filtering for enhanced aerial images.• Full phase shift and transmittance variation mask capabilities. |
| Implantation | • Experimentally verified Pearson and dual Pearson analytical models.• Extended low energy and high energy implant parameter tables.• Binary Collision Approximation Monte Carlo calculations for crystalline and amorphous materials.• Universal tilt and rotation capability for both analytic and Monte Carlo calculations. |
| Oxidation | • Compressible and viscous stress dependent models.• Separate rate coefficients for silicon and polysilicon materials.• HCL and pressure-enhanced oxidation models.• Impurity concentration dependent effects.• Ability to simulate the oxidation of structures with deep trenches, undercuts, and ONO layers.• Accurate models for the simultaneous oxidation and lifting of polysilicon regions. |
| Silicidation | • Models for titanium, tungsten, cobalt, and platinum silicides.• Experimentally verified growth rates.• Reactions and boundary motion on silicide/metal and silicide/silicon interfaces.• Accurate material consumption model. |
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