8.13 Sspd_chapter 6_part 7_device simulation1

SSPD_Chapter 6_Part 7_Device Simulation1.

(Atlas User Manual has been used for preparing this Section. support@silvaco.com may be contacted for any assistance required while using their software.)

In this Section Part 7 we will use Device Simulation Software for studying the device testing and characterization in a virtual lab. In this particular instance we will use ATLAS for Device Simulation and Characterization.

The information presented is based on the assumptions that the reader is (1) familiar with the basic terminology of semiconductor processing and semiconductor device operation, and (2) understands the basic operation of the computer hardware and operating system being employed.

ATLAS is a modular and extensible framework for one, two and three dimensional semiconductor device simulation. It is implemented using modern software engineering practices that promote reliability, maintainability, and extensibility. Products that use the ATLAS Framework meet the device simulation needs of all semiconductor application areas.

ATLAS provides general capabilities for physically-based two (2D) and three-dimensional (3D) simulation of semiconductor devices. ATLAS is designed to be used in conjunction with the VWF (Virtual Wafer Fab) INTERACTIVE TOOLS. The VWF INTERACTIVE TOOLS are DECKBUILD, TONYPLOT, DEVEDIT, MASKVIEWS, and OPTIMIZER.

ATLAS is supplied with numerous examples that can be accessed through DECKBUILD. These examples demonstrate most of ATLAS’s capabilities. The input files that are provided with the examples given in Part 7.1 are an excellent starting point for developing your own input files. Part 7.1 gives “Getting Started with ATLAS” which contains a section “Accessing The Examples”.

7.1. Features and capabilities of ATLAS.

ATLAS provides a comprehensive set of physical models, including:

• DC, AC small-signal, and full time-dependency.

• Drift-diffusion transport models.

• Energy balance and Hydrodynamic transport models.

• Lattice heating and heatsinks.

• Graded and abrupt heterojunctions.

• Optoelectronic interactions with general ray tracing.

• Amorphous and polycrystalline materials.

• General circuit environments.

• Stimulated emission and radiation

• Fermi-Dirac and Boltzmann statistics.

• Advanced mobility models.

• Heavy doping effects.

• Full acceptor and donor trap dynamics

• Ohmic, Schottky, and insulating contacts.

• SRH, radiative, Auger, and surface recombination.

• Impact ionization (local and non-local).

• Floating gates.

• Band-to-band and Fowler-Nordheim tunneling.

• Hot carrier injection.

• Quantum transport models

• Thermionic emission currents.

ATLAS uses powerful numerical techniques, including:

• Accurate and robust discretization techniques.

• Gummel, Newton, and block-Newton nonlinear iteration strategies.

• Efficient solvers, both direct and iterative, for linear subproblems.

• Powerful initial guess strategies.