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The power supply voltage can be significantly reduced with Tri-Gate without impairing its speed of operation due to increased effective width in Tri-Gate compared to planar transistor. The combination of lower supply voltage and reduced leakage current results in substantial power saving.

Fin-FET has a smaller cross-sectional area for the same performance of planar transistor.This gives a reduced area of incidence for cosmic particles which result into reduced Single-Event Error(SEE). This has been authenticated by 22nm implementation of Intel TriGate Fin-FET.

3-D Geometry and structure provides a host of improvements over planar structure as discussed above and enumerated below:

  1. Improved performance;
  2. Reduced active and leakage power;
  3. Higher packing density;
  4. Reduction in susceptibility to charged particles SEE.

In 1974, IBM’s Robert Dennnard, inventor of single transistor DRAM(Dynamic RAM) showed that when MOSFET geometries, voltages and dopings were scaled down, gate transit time also scaled down and performance thus improved by the same factor. [“Design of Ion-Implanted MOSFET with very small Physical Dimensions”, IEEE Journal of Solid State Circuits, Vol.SC-9,No.5, 256-268,October 1974]. Taken together, density improvement as predicted by Moore’s Law and the performance improvement by Dennard signaled a coming explosion of growth in chip processing power. This precisely happened and this is what has been fueling Computer-Communication Revolution till date.

But there was great setback in 2005. Traditionally each new generation of Simanufacturing involves higher density and higher speed. But this scalng trend predicted above started plataeuing out at 90nm process technology. Clock rates stagnated as already pointed out above in Section 2.1.3. Power consumption and dissipation have grown with scaling. There was unacceptable gate leakage current. Therefore high-K(HfO, K=25) and metal gate technology was adopted. This maintained the improvement of performance by scaling till 40nm process technology.

On 4 th May 2011, Intel adopted Fin-FET (3D) Transistor for the manufacture of 22nm Semiconductor Products. Intel’s 22nm Tri-Gate uses 3 rd Generation high K/metal-gate scheme, copper interconnect, strained Si and 193nm Immersion Lithography.

International Technology Roadmaps for Semiconductor (ITRS) in 2012 identified 3-D Transistor Technology as the primary enabler of all incremental semiconductor improvements beyond 22nm process technology. 3-D Tri Gate is able to maintain the advantage below 22nm of higher packing density not by scaling but by extending the transistor width in the third dimension. This allows designers the ability to trade off the size and width of the transistor ‘fin’ based on performance, power, and transistor density packing objectives.

By adopting the 3-D technology, the steady march and consistent improvement in packaging density according to Moore’s Law has been maintained. This has meant steady improvement in performance, reduction in power back-up and reduction in cost per transistor. In addition there has been steady improvement in standby power and operating power dissipation.

Questions & Answers

what is variations in raman spectra for nanomaterials
Jyoti Reply
I only see partial conversation and what's the question here!
Crow Reply
what about nanotechnology for water purification
RAW Reply
please someone correct me if I'm wrong but I think one can use nanoparticles, specially silver nanoparticles for water treatment.
Damian
yes that's correct
Professor
I think
Professor
what is the stm
Brian Reply
is there industrial application of fullrenes. What is the method to prepare fullrene on large scale.?
Rafiq
industrial application...? mmm I think on the medical side as drug carrier, but you should go deeper on your research, I may be wrong
Damian
How we are making nano material?
LITNING Reply
what is a peer
LITNING Reply
What is meant by 'nano scale'?
LITNING Reply
What is STMs full form?
LITNING
scanning tunneling microscope
Sahil
how nano science is used for hydrophobicity
Santosh
Do u think that Graphene and Fullrene fiber can be used to make Air Plane body structure the lightest and strongest. Rafiq
Rafiq
what is differents between GO and RGO?
Mahi
what is simplest way to understand the applications of nano robots used to detect the cancer affected cell of human body.? How this robot is carried to required site of body cell.? what will be the carrier material and how can be detected that correct delivery of drug is done Rafiq
Rafiq
what is Nano technology ?
Bob Reply
write examples of Nano molecule?
Bob
The nanotechnology is as new science, to scale nanometric
brayan
nanotechnology is the study, desing, synthesis, manipulation and application of materials and functional systems through control of matter at nanoscale
Damian
Is there any normative that regulates the use of silver nanoparticles?
Damian Reply
what king of growth are you checking .?
Renato
What fields keep nano created devices from performing or assimulating ? Magnetic fields ? Are do they assimilate ?
Stoney Reply
why we need to study biomolecules, molecular biology in nanotechnology?
Adin Reply
?
Kyle
yes I'm doing my masters in nanotechnology, we are being studying all these domains as well..
Adin
why?
Adin
what school?
Kyle
biomolecules are e building blocks of every organics and inorganic materials.
Joe
anyone know any internet site where one can find nanotechnology papers?
Damian Reply
research.net
kanaga
sciencedirect big data base
Ernesto
Introduction about quantum dots in nanotechnology
Praveena Reply
what does nano mean?
Anassong Reply
nano basically means 10^(-9). nanometer is a unit to measure length.
Bharti
do you think it's worthwhile in the long term to study the effects and possibilities of nanotechnology on viral treatment?
Damian Reply
absolutely yes
Daniel
how did you get the value of 2000N.What calculations are needed to arrive at it
Smarajit Reply
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Source:  OpenStax, Solid state physics and devices-the harbinger of third wave of civilization. OpenStax CNX. Sep 15, 2014 Download for free at http://legacy.cnx.org/content/col11170/1.89
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