<< Chapter < Page Chapter >> Page >

Table.2.1.3.6.Comparative study of 2147/INTEL(1977) and 6147/Hitachi(1978).

Product HMOS 4kStaticRAM Hi-CMOS4kSRAM
Technology NMOS Twin-well CMOS
Speed 55/70ns 55/70ns
I ACTIVE /I IDLE 110mA/15mA 15mA/1μA
Chip Size 16.2nm 2 11.5nm 2

The Table clearly states that Hitachi CMOS memory is several orders of magnitude better than INTEL’s NMOS memory as far as standby power dissipation is considered. By 1981, CMOS 16k SRAM was manufactured and sold.

Table 2.1.3.7 gives the comparative study of microprocessor(μP) based on NMOS and CMOS.

Table 2.1.3.7.Comparative study of 6801/HIT(79) and 6301/HIT(81)

Product 6801/HIT(79)8-bit μP 6301/HIT(81)8-bit μP
Technology 4-μmNMOS 3-μmCMOS
Speed 1MHz 1MHz,1.5MHz,2MHz
Power-Active 900mW 30mW(1MHz)
Stand-by Power 70mW 0.01mW
Pin Count 40Pins 40Pins

EPSON introduced all CMOS computer HX-20 in 1982. It was a hand-held computer and proto-type/ancestor of the present day nomadic tools. Gradually all products are shifting to CMOS Technology.

Presently Digital Consumer Market(smart phones and Tablet PCs) is driving Semiconductor Industries. In coming day, Automotive market, Robotics, Medfical&Health Care and Sensor Network Market will be driving the Semiconductor Market.

The processor speed has increased 10 times from Pentium in 1993 to Pentium III in 1999 but with the introduction of Core2Duo in 2006 to Corei7 in 2013 the core speed has increased 1.5 times only but the appetite for high speed computing is insatiable. So obviously this paradigm of core computing will not be able to keep up with the computing needs of the post-industrial era. So new computing paradigms will have to be invented.

Breahthrough in Strained Silcon and High-K,metal gate Technology has allowed Fabless Companies to follow the Road Map set by Moore’s Law.

2.1.3.1. 3-D Tri-Gate Technology/Fin-FET Technology.

In 1991 a revolutionary 3D FinFET concept was put forward by Digh Hisamato and team of other researchers at Hitachi Central Research Laboratory. This proposed “WRAP AROUND” gate transistor technology. In conventional Planar Technology, GATE exercises control on the 2-D channel of electrons/holes only from the TOP.This new technology allowed the gate to exercise its control from 3 directions: From the TOP as well as from the TWO SIDES as shown in the Figure 2.19.

In Figure 2.19, the channel widths of Planar Transistor and Fin-FET are defined. In Figure 2.20 the channel length is defined in Fin-FET. The current drive capability and performance is directly proportional to its effective channel width as seen from the four Equations below:

The channel width can be significantly enhanced in 3-D Transistor structure in relation to planar structure because of the ability to extend the the width in the third dimension without increasing the layout area. This provides the potential for both enhanced design flecxibility for the designer as well as increased performance withput the same penality in 2-D area which exists when enhancing the width in planar transistor.

There is reduced active and leakage power in 3D Fin-FET transistors. This advantage results from the improved control of the channel by Gate’s electric field from the three sides of the Fin as shown in the figures. This results in a steeper curve of I D -V GS for Fin-FET as shown in Figure 2.21.The steeper curve results in significant reduction in leakage current in Fin-FET for the same performance of planar transistor or substantially higher performance in terms of operating speed or a combination of both.

Questions & Answers

Is there any normative that regulates the use of silver nanoparticles?
Damian Reply
what king of growth are you checking .?
Renato
What fields keep nano created devices from performing or assimulating ? Magnetic fields ? Are do they assimilate ?
Stoney Reply
why we need to study biomolecules, molecular biology in nanotechnology?
Adin Reply
?
Kyle
yes I'm doing my masters in nanotechnology, we are being studying all these domains as well..
Adin
why?
Adin
what school?
Kyle
biomolecules are e building blocks of every organics and inorganic materials.
Joe
anyone know any internet site where one can find nanotechnology papers?
Damian Reply
research.net
kanaga
sciencedirect big data base
Ernesto
Introduction about quantum dots in nanotechnology
Praveena Reply
what does nano mean?
Anassong Reply
nano basically means 10^(-9). nanometer is a unit to measure length.
Bharti
do you think it's worthwhile in the long term to study the effects and possibilities of nanotechnology on viral treatment?
Damian Reply
absolutely yes
Daniel
how to know photocatalytic properties of tio2 nanoparticles...what to do now
Akash Reply
it is a goid question and i want to know the answer as well
Maciej
characteristics of micro business
Abigail
for teaching engĺish at school how nano technology help us
Anassong
Do somebody tell me a best nano engineering book for beginners?
s. Reply
there is no specific books for beginners but there is book called principle of nanotechnology
NANO
what is fullerene does it is used to make bukky balls
Devang Reply
are you nano engineer ?
s.
fullerene is a bucky ball aka Carbon 60 molecule. It was name by the architect Fuller. He design the geodesic dome. it resembles a soccer ball.
Tarell
what is the actual application of fullerenes nowadays?
Damian
That is a great question Damian. best way to answer that question is to Google it. there are hundreds of applications for buck minister fullerenes, from medical to aerospace. you can also find plenty of research papers that will give you great detail on the potential applications of fullerenes.
Tarell
what is the Synthesis, properties,and applications of carbon nano chemistry
Abhijith Reply
Mostly, they use nano carbon for electronics and for materials to be strengthened.
Virgil
is Bucky paper clear?
CYNTHIA
carbon nanotubes has various application in fuel cells membrane, current research on cancer drug,and in electronics MEMS and NEMS etc
NANO
so some one know about replacing silicon atom with phosphorous in semiconductors device?
s. Reply
Yeah, it is a pain to say the least. You basically have to heat the substarte up to around 1000 degrees celcius then pass phosphene gas over top of it, which is explosive and toxic by the way, under very low pressure.
Harper
Do you know which machine is used to that process?
s.
how to fabricate graphene ink ?
SUYASH Reply
for screen printed electrodes ?
SUYASH
What is lattice structure?
s. Reply
of graphene you mean?
Ebrahim
or in general
Ebrahim
in general
s.
Graphene has a hexagonal structure
tahir
On having this app for quite a bit time, Haven't realised there's a chat room in it.
Cied
what is biological synthesis of nanoparticles
Sanket Reply
Got questions? Join the online conversation and get instant answers!
Jobilize.com Reply

Get the best Algebra and trigonometry course in your pocket!





Source:  OpenStax, Solid state physics and devices-the harbinger of third wave of civilization. OpenStax CNX. Sep 15, 2014 Download for free at http://legacy.cnx.org/content/col11170/1.89
Google Play and the Google Play logo are trademarks of Google Inc.

Notification Switch

Would you like to follow the 'Solid state physics and devices-the harbinger of third wave of civilization' conversation and receive update notifications?

Ask