SSPD_Chapter 6_Part 10_MOSFET Simulation.
6.10.1. mos1ex01:Plot of I D -V GS at constant V DS and extraction of V Th .
go athena
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line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
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line y loc=0.0 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
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init orientation=100 c.phos=1e14 space.mul=2
#pwell formation including masking off of the nwell
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diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
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etch oxide thick=0.02
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#P-well Implant
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implant boron dose=8e12 energy=100 pears
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diffus temp=950 time=100 weto2 hcl=3
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#N-well implant not shown -
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# welldrive starts here
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
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diffus time=220 temp=1200 nitro press=1
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diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
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etch oxide all
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#sacrificial "cleaning" oxide
diffus time=20 temp=1000 dryo2 press=1 hcl=3
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etch oxide all
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#gate oxide grown here:-
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
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# Extract a design parameter
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05
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#vt adjust implant
implant boron dose=9.5e11 energy=10 pearson
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depo poly thick=0.2 divi=10
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#from now on the situation is 2-D
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etch poly left p1.x=0.35
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method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
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implant phosphor dose=3.0e13 energy=20 pearson
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depo oxide thick=0.120 divisions=8
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etch oxide dry thick=0.120
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implant arsenic dose=5.0e15 energy=50 pearson
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method fermi compress
diffuse time=1 temp=900 nitro press=1.0
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# pattern s/d contact metal
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18
# Extract design parameters
# extract final S/D Xj
extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1
# extract the N++ regions sheet resistance
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1
# extract the sheet rho under the spacer, of the LDD region
extract name="ldd sheet rho" sheet.res material="Silicon" \
mat.occno=1 x.val=0.3 region.occno=1
# extract the surface conc under the channel.
extract name="chan surf conc" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=0.45
# extract a curve of conductance versus bias.
extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" \
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\
outfile="extract.dat"
# extract the long chan Vt
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
structure mirror right
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside
structure outfile=mos1ex01_0.str
# plot the structure
tonyplot mos1ex01_0.str -set mos1ex01_0.set
############# Vt Test : Returns Vt, Beta and Theta ################
go atlas
# set material models
models cvt srh print
contact name=gate n.poly
interface qf=3e10
method newton
solve init
# Bias the drain
solve vdrain=0.1